MT16KTF51264HZ-1G4K1 Micron 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module
MPN: | MT16KTF51264HZ-1G4K1 |
Manufacturer: | Micron Technology |
Detail: |
MT16KTF51264HZ-1G4K1 Micron 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module
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Price: | $47.99 |
Availability: | In Stock |
Quantity |
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General Information
The MT16KTF51264HZ-1G4K1 is a memory module from Micron, with a capacity of 4GB and a speed of DDR3-1333MHz. It is compatible with systems that use the PC3-10600 memory standard and does not have error correction capabilities (non-ECC). With a latency of CL9, it has a relatively fast response time, and it is unbuffered, meaning it does not have a memory buffer. The module is designed to be installed in 204-pin SoDIMM sockets and operates at a low voltage of 1.35V, which is more energy-efficient than standard voltage modules. The module is dual rank, meaning that it has two 64-bit memory channels.
- Capacity: 4GB
- Speed: DDR3-1333MHz
- Memory standard: PC3-10600
- Error Correction: non-ECC
- Latency: CL9
- Buffering: Unbuffered
- Socket: 204-pin SoDIMM
- Operating voltage: 1.35V (Low Voltage)
- Rank: Dual
Technical Specs
Attribute | Value |
---|---|
Capacity | 4GB |
Speed | DDR3-1333MHz |
Memory standard | PC3-10600 |
Error Correction | non-ECC |
Latency | CL9 |
Buffering | Unbuffered |
Socket | 204-pin SoDIMM |
Operating voltage | 1.35V (Low Voltage) |
Rank | Dual |