MT16KTF51264HZ-1G4K1 Micron 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDIMM 1.35V Low Voltage Dual Rank Memory Module

General Information

The MT16KTF51264HZ-1G4K1 is a memory module from Micron, with a capacity of 4GB and a speed of DDR3-1333MHz. It is compatible with systems that use the PC3-10600 memory standard and does not have error correction capabilities (non-ECC). With a latency of CL9, it has a relatively fast response time, and it is unbuffered, meaning it does not have a memory buffer. The module is designed to be installed in 204-pin SoDIMM sockets and operates at a low voltage of 1.35V, which is more energy-efficient than standard voltage modules. The module is dual rank, meaning that it has two 64-bit memory channels.

• Capacity: 4GB
• Speed: DDR3-1333MHz
• Memory standard: PC3-10600
• Error Correction: non-ECC
• Latency: CL9
• Buffering: Unbuffered
• Socket: 204-pin SoDIMM
• Operating voltage: 1.35V (Low Voltage)
• Rank: Dual

Technical Specs