M378B5273EB0-CK0 Samsung 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module
MPN: | M378B5273EB0-CK0 |
Manufacturer: | Samsung |
Detail: |
M378B5273EB0-CK0 Samsung 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module
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Price: | $36.14 |
Availability: | In Stock |
Quantity |
General Information
The Samsung 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module is a high-performance memory solution for desktop computers. With its 4GB capacity, it offers a cost-effective upgrade for older systems or additional memory for newer ones. It uses DDR3 technology and runs at a speed of 1600MHz with a PC3-12800 classification. The module is non-ECC (Error Correction Code), unbuffered, and operates at a CAS Latency of 11. It features a low voltage of 1.35V and a dual rank configuration, making it a power-efficient option.
Technical specifications:
Feature | Specification |
---|---|
Capacity | 4GB |
Technology | DDR3 |
Speed | 1600MHz |
Classification | PC3-12800 |
Error Correction | Non-ECC |
Buffered/Unbuffered | Unbuffered |
CAS Latency | 11 |
Voltage | 1.35V |
Rank | Dual |
Pin Count | 240-Pin |
Technical Specs
Feature | Specification |
---|---|
Capacity | 4GB |
Technology | DDR3 |
Speed | 1600MHz |
Classification | PC3-12800 |
Error Correction | Non-ECC |
Buffered/Unbuffered | Unbuffered |
CAS Latency | 11 |
Voltage | 1.35V |
Rank | Dual |
Pin Count | 240-Pin |